IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), which combines the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. GTR saturation voltage decreases, current density increases, but driving current is higher; MOSFET has a low driving power and fast switching speed, but it has a large conduction voltage drop and low current density. IGBT combines the advantages of both devices, with low driving power and reduced saturation voltage.
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Beneficiary Bank Name: JPMorgan Chase Bank N.A., Hong Kong Branch
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Beneficiary Name: XU JIA HENG ELECTRONICS CO., LIMITED
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First Name: JIA SHAN
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